FM24CL64-G

Product Summary

The FM24CL64-G is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24CL64-G performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers write endurance orders of magnitude higher than EEPROM. Also, FRAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. These capabilities make the FM24CL64-G ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24CL64-G provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The FM24CL64-G is available in industry standard 8-pin SOIC and DFN packages using a familiar two-wire protocol. It is guaranteed over an industrial temperature range of -40°C to +85°C.

Parametrics

Absolute maximum ratings:(1)Power Supply Voltage with respect to VSS, VDD: -1.0V to +5.0V; (2)Voltage on any pin with respect to VSS, VIN: -1.0V to +5.0V and VIN < VDD+1.0V *; (3)Storage Temperature, TSTG: -55°C to +125°C; (4)Lead Temperature (Soldering, 10 seconds), TLEAD: 300° C; (5)Electrostatic Discharge Voltage, Human Body Model (JEDEC Std JESD22-A114-B), VESD:4kV; (6)Electrostatic Discharge Voltage, Machine Model (JEDEC Std JESD22-A115-A), VESD: 300V; (7)Package Moisture Sensitivity Level: MSL-1.

Features

Features: (1)64K bit Ferroelectric Nonvolatile RAM; (2)Organized as 8,192 x 8 bits; (3)Unlimited Read/Write Cycles; (4)45 year Data Retention; (5)NoDelay Writes; (6)Advanced High-Reliability Ferroelectric Process; (7)Fast Two-wire Serial Interface; (8)Up to 1 MHz maximum bus frequency; (9)Direct hardware replacement for EEPROM; (10)Supports legacy timing for 100 kHz & 400 kHz; (11)Low Power Operation; (12)True 2.7V-3.6V Operation; (13)75 μA Active Current (100 kHz); (14)1 μA Standby Current; (15)Industry Standard Configuration; (16)Industrial Temperature -40° C to +85° C; (17)8-pin SOIC and 8-pin DFN Packages; (18)“Green” Packaging Options.

Diagrams