(Hong Kong)
Product Summary
The FM25L04-G is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. Unlike serial EEPROMs, the FM25L04-G performs write operations at bus speed. No write delays are incurred. This device provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. It uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technology.
Parametrics
Absolute maximum ratings:(1)VDD, Power Supply Voltage with respect to VSS: -1.0V to +5.0V; (2)VIN, Voltage on any pin with respect to VSS: -1.0V to +5.0V and VIN < VDD+1.0V; (3)TSTG, Storage Temperature: -55°C to + 125°C; (4)TLEAD, Lead Temperature (Soldering, 10 seconds): 300° C;(5)Industrial Temperature -40°C to +85°C.
Features
Features:(1)4K bit Ferroelectric Nonvolatile RAM:Organized as 512 x 8 bits;Unlimited Read/Write Cycles; 45 Year Data Retention; NoDelay Writes;Advanced High-Reliability Ferroelectric Process; (2)Very Fast Serial Peripheral Interface - SPI:Up to 14 MHz Frequency;Direct Hardware Replacement for EEPROM;SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1); (3)Write Protection Scheme:Hardware Protection;Software Protection; (4)Low Power Consumption:Low Voltage Operation 2.7-3.6V;1 μA Standby Current; (5)Industry Standard Configuration:Industrial Temperature -40°C to +85°C;8-pin SOIC;Green 8-pin SOIC.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FM25L04-G |
Ramtron |
F-RAM 4K (512x8) 2.7V |
Data Sheet |
Negotiable |
|
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|
FM25L04-GA |
Ramtron |
F-RAM 4K (512x8) 2.7V Grade 1 |
Data Sheet |
Negotiable |
|
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|
FM25L04-GATR |
Ramtron |
F-RAM 4K (512x8) 2.7V Grade 1 |
Data Sheet |
Negotiable |
|
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|
FM25L04-GTR |
Ramtron |
F-RAM 4K (512x8) 2.7V |
Data Sheet |
Negotiable |
|
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